Research Group:

Radiation Effects and Reliability Group/Institute for Space and Defense Electronics at Vanderbilt University

 

 

Research Interests:

Effects of ionizing radiation on microelectronic devices & materials.

Origin(s) of 1/f noise in semiconductors, semiconductor devices, and metals.

Defects, reliability, radiation response of SiC, GaN, and other compound semiconductor devices

Radiation hardness assurance test methods.

Charge trapping in silicon dioxide, and interface-trap generation.

Radiation effects modeling and simulation.

Novel microelectronic materials, including silicon-on-insulator materials.

Electronics for high-radiation and high-temperature environments.

Advanced microelectronic processing/characterization, including ultrathin oxides & alternative dielectrics.

Thermally stimulated current methods to profile defects in insulators.

 

Education:

Ph. D., Solid State Physics, Purdue University, May 1984          

M. S., Experimental Physics, Purdue University, August 1981

B. S., Physics and Applied Math, Purdue University, May 1980

 

Contact Information:

Postal

Vanderbilt University

VU Station B #350092

2301 Vanderbilt Place

Nashville, TN 37235

Courier

Vanderbilt University

400 24th Ave. S.

Featheringill Hall, Room 254

Nashville, TN 37212

Phone

(615) 322-2498

Fax

(615) 343-6702

Messages

Susan Adams (615) 322-2771

E-mail (Vanderbilt)

dan.fleetwood@vanderbilt.edu

E-mail (Home)

dmfleet@aol.com

 

Professional Memberships and Activities:

Fellow, IEEE

Fellow, The American Physical Society

Chairman, IEEE NPSS Radiation Effects Committee

Former Chair (2005), APS Forum on Industrial and Applied Physics

Sigma Pi Sigma, Phi Beta Kappa

International Correspondence Chess GrandMaster

 

Honors and Awards:

IEEE Nuclear and Plasma Sciences Society, Merit Award, 2009

 

Purdue University, Distinguished Science Alumnus, 2007

 

Discover Magazine (1998), R&D Magazine R&D 100 (1997) and Industry Week Technology of Year (1997) Awards, for co-invention of protonic nonvolatile field effect transistor memory (patent issued 11/3/1998).

 

More than 20 Outstanding/Meritorious Conference Paper Awards for IEEE Conferences on Nuclear and Space Radiation Effects and Conferences on Hardened Electronics and Radiation Technology.

 

Distinguished Member of the Technical Staff, Sandia National Laboratories, 1990-1999

 

Lark-Horovitz Award, Purdue University, 1984.

 

Biographical Information

 

Daniel M. Fleetwood received his B. S., M. S., and Ph. D. degrees in Physics from Purdue University in 1980, 1981, and 1984. Dan joined Sandia National Laboratories in Albuquerque, New Mexico, in 1984, and was named a Distinguished Member of the Technical Staff in the Radiation Technology and Assurance Department in 1990. In 1999 he left Sandia to accept the position of Professor of Electrical Engineering at Vanderbilt University in Nashville, Tennessee. In 2000, he was also named a Professor of Physics, in 2001 he was appointed Associate Dean for Research of the Vanderbilt School of Engineering, and in 2003 he was named Chair of the Electrical Engineering and Computer Science Department. Dan is the author of more than 400 publications on radiation effects in microelectronics, ten of which have been recognized with Outstanding Paper Awards. These papers have been cited more than 8200 times (citation h factor = 52). In 2009, he received the IEEE Nuclear and Plasma Sciences Society’s Merit Award, and in 2011 he was named an Honored Professor of the Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences. In 1997 Dan received R&D 100 and Industry Week Magazine awards for co-invention of a new type of computer memory chip based on mobile protons in SiO2. This chip was also recognized as Discover Magazine’s 1998 Invention of the Year in computer hardware and electronics. Dan is a Fellow of both the Institute for Electrical and Electronics Engineers and The American Physical Society, and a member of ASEE, Phi Beta Kappa, and Sigma Pi Sigma. Dan was the 8th American to earn the International Correspondence Chess GrandMaster title, played Board 1 for the United States Correspondence Chess Olympics team in the 15th Olympiad Final and Board 3 in the 14th and 18th Olympiad finals (http://www.iccf-webchess.com/), and finished 8th in the 18th International Correspondence Chess Championship.

 

 Abridged CV_Fleetwood_April 2013

Full Publication List: updated March 2013

Full Presentation List: updated December 2012